Wuxi NCE Power Semiconductor NCE65TF099T
650V 38A 89m@10V,19A 322W 3.5V@250uA 1 N-Channel TO-247 MOSFETs ROHS

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库存 465件
一天内发货数量
单价
1+
$2.15011
10+
$1.79251
30+
$1.56770
90+
$1.33835
最低订购数量 1
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NCE65TF099T
NCE
1+
$2.31821
10+
$1.93267
30+
$1.69085
90+
$1.44298
510+
$1.33133
库存 0件
库存 0件
一天内发货
最小起订量 1
合计:$0.00
合计:$0.00
| 属性 | 值 |
|---|---|
| 制造商产品编号 | NCE65TF099T |
| 制造商 | NCE |
| 产品分类 | MOSFETs |
| RoHS | Yes |
| ECCN | - |
| Drain Source Voltage (Vdss) | 650V |
| Type | 1 N-channel |
| Gate Threshold Voltage (Vgs(th)@Id) | 3.5V@250uA |
| Total Gate Charge (Qg@Vgs) | 55nC@10V |
| Continuous Drain Current (Id) | 38A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 89mΩ@10V,19A |
| Power Dissipation (Pd) | 322W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.5pF |
| Input Capacitance (Ciss@Vds) | 3.2nF@50V |
| Drain to Source Voltage | 650V |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Number | 1 N-Channel |
| Gate Charge(Qg) | 55nC@10V |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Current - Continuous Drain(Id) | 38A |
| RDS(on) | 89mΩ@10V,19A |
| Pd - Power Dissipation | 322W |
| Input Capacitance(Ciss) | 3.2nF@50V |
| Package | TO-247 |
| Packaging | Tube-packed |
| Standard Package | 30 |
| Weight | 7.9 |















