High Speed 650 V, hard-switching IGBT TRENCHSTOP 5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT.

Infineons new L5 low saturation voltage V CEsat TRENCHSTOP IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55m TRENCHSTOP 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level 1.05V for 30A IGBT and 1.10V for 75A IGBT.

The Reverse Conducting E1 1200 V , 15 A RC-E IGBTs with monolithically integrated diode in a TO-247 package focusing on system efficiency and reliability for the demanding requirements of induction cooking

IGBT 600V 60A 308W TO247AC

IGBT 430V 20A TO220AB

Infineons new L5 low saturation voltage V CEsat TRENCHSTOP IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55m TRENCHSTOP 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level 1.05V for 30A IGBT and 1.10V for 75A IGBT.

High speed 600 V, 20 A hard-switching TRENCHSTOP IGBT3 co-packed with free-wheeling diode in a TO247 package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.

The Reverse Conducting E1 1200 V , 25 A RC-E IGBTs with monolithically integrated diode in a TO-247 package focusing on system efficiency and reliability for the demanding requirements of induction cooking

Hard-switching 650 V, 39 A TRENCHSTOP 5 S5 IGBT in a small footprint TO-220 package addresses applications switching between 10 kHz and 40 kHz to deliver high current density, high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization.

IGBT 600V 6.8A 25W TO220FP