Infineon Technologies FP200R12N3T7
200A 1.2kV Through Hole,122x62.5mm Single IGBTs

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FP200R12N3T7
Infineon
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FP200R12N3T7
Infineon
1+
$116.66486
30+
$110.73578
库存 0件
库存 0件
一天内发货
最小起订量 1
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| 属性 | 值 |
|---|---|
| 制造商产品编号 | FP200R12N3T7 |
| 制造商 | Infineon |
| 产品分类 | IGBT Transistors / Modules |
| RoHS | Yes |
| ECCN | - |
| Operating Temperature | -40℃~+175℃ |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Current - Collector(Ic) | 200A |
| Td(off) | 351ns |
| Td(on) | 203ns |
| Input Capacitance(Cies) | 40.3nF@25V |
| Voltage - Forward(Vf) | 1.72V@200A |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | [email protected] |
| Vce Saturation(VCE(sat)) | 1.8V@200A,15V |
| Switching Energy(Eoff) | 12.9mJ |
| Turn-On Energy (Eon) | 25.1mJ |
| Package | Through Hole,122x62.5mm |
| Packaging | Box-packed |
| Standard Package | 10 |
| Weight | 366.7 |















