STMicroelectronics STGW30M65DF2
TO-247-3 IGBT Transistors / Modules ROHS
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| 属性 | 值 |
|---|---|
| 制造商产品编号 | STGW30M65DF2 |
| 制造商 | ST |
| 产品分类 | IGBT Transistors / Modules |
| RoHS | Yes |
| ECCN | EAR99 |
| Operating Temperature | -55℃~+175℃ |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Current - Collector(Ic) | 60A |
| Reverse Recovery Time(trr) | 140ns |
| Current- Forward(If) | 60A |
| Pd - Power Dissipation | 258W |
| Pulsed Current- Forward(Ifm) | 120A |
| Vce Saturation(VCE(sat)) | 2V@30A,15V |
| Td(off) | 115ns |
| Td(on) | 31.6ns |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@500uA |
| Reverse Transfer Capacitance (Cres) | 46pF |
| Gate Charge(Qg) | 80nC@15V |
| Input Capacitance(Cies) | 2.49nF |
| Voltage - Forward(Vf) | 2.65V@30A |
| Output Capacitance(Coes) | 143pF |
| Package | TO-247 |
| Packaging | Tube-packed |
| Standard Package | 600 |
| Weight | 6.623 |
