HXY MOSFET AOK40B65HQ2
250W 70A 650V TO-247 Single IGBTs ROHS
发货:
支付:
库存 0件
一天内发货数量
单价
1+
$4.20682
10+
$3.61555
30+
$3.26400
90+
$2.90803
510+
$2.74474
990+
$2.66976
最低订购数量 1
合计:
$4.21
满￥199包邮
数量越多价格越优惠吗？￥
AOK40B65HQ2
HXY MOSFET
1+
$4.33893
10+
$3.72905
30+
$3.36646
90+
$2.99932
510+
$2.83092
库存 0件
库存 0件
一天内发货
最小起订量 1
合计:$0.00
合计:$0.00
| 属性 | 值 |
|---|---|
| 制造商产品编号 | AOK40B65HQ2 |
| 制造商 | HXY MOSFET |
| 产品分类 | IGBT Transistors / Modules |
| RoHS | Yes |
| ECCN | - |
| Operating Temperature | -40℃~+175℃ |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Pd - Power Dissipation | 250W |
| Reverse Transfer Capacitance (Cres) | 11pF |
| Td(on) | 26ns |
| Pulsed Current- Forward(Ifm) | 160A |
| Vce Saturation(VCE(sat)) | 2.1V@40A,15V |
| Turn-On Energy (Eon) | 900uJ |
| Current - Collector(Ic) | 70A |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@250uA |
| Td(off) | 136ns |
| Reverse Recovery Time(trr) | 56ns |
| Gate Charge(Qg) | 57nC@15V |
| Switching Energy(Eoff) | 430uJ |
| Voltage - Forward(Vf) | 1.8V@40A |
| Current- Forward(If) | 70A |
| Input Capacitance(Cies) | 1.52nF |
| Output Capacitance(Coes) | 110pF |
| Package | TO-247 |
| Packaging | Tube-packed |
| Standard Package | 30 |
| Weight | 7.93 |
