Infineon Technologies IRFP4668PBF
200V 130A 8m@10V,81A 520W 3V@250uA 1 N-Channel TO-247AC MOSFETs ROHS
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$1.84445
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IRFP4668PBF
Infineon
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$1.91568
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$1.72339
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$1.40486
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$1.28179
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$1.22486
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IRFP4668PBF
Infineon
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IRFP4668PBF
Infineon
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$2.17499
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IRFP4668PBF
Infineon
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$1.36659
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$1.31530
100+
$1.19222
500+
$1.13068
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| 属性 | 值 |
|---|---|
| 制造商产品编号 | IRFP4668PBF |
| 制造商 | Infineon |
| 产品分类 | MOSFETs |
| RoHS | Yes |
| ECCN | EAR99 |
| Power Dissipation (Pd) | 520W |
| Type | 1 N-channel |
| Drain Source Voltage (Vdss) | 200V |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
| Continuous Drain Current (Id) | 130A |
| Reverse Transfer Capacitance (Crss@Vds) | 160pF |
| Reverse Transfer Capacitance (Crss@Vds) | 160pF@10V |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 8mΩ@10V,81A |
| Input Capacitance (Ciss@Vds) | 10720pF@0V |
| Total Gate Charge (Qg@Vgs) | 241nC@10V |
| Type | N-channel |
| Current - Continuous Drain(Id) | 130A |
| Drain to Source Voltage | 200V |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Number | 1 N-Channel |
| Gate Threshold Voltage (Vgs(th)) | 5V@250uA |
| Pd - Power Dissipation | 520W |
| RDS(on) | 9.7mΩ@10V |
| Output Capacitance(Coss) | 810pF |
| Input Capacitance(Ciss) | 10.72nF |
| Gate Charge(Qg) | 241nC@10V |
| Package | TO-247AC |
| Packaging | Tube-packed |
| Standard Package | 25 |
| Weight | 7.28 |
