Infineon Technologies IRF5210STRLPBF
100V 38A 3.1W 60m@10V,38A 2V@250uA 1 Piece P-Channel D2PAK MOSFETs ROHS
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$1.00484
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$0.82272
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$0.64216
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$0.51498
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IRF5210STRLPBF
Infineon
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$1.03046
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$0.85363
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$0.76589
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$0.67824
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$0.55373
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IRF5210STRLPBF
Infineon
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IRF5210STRLPBF
Infineon
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$0.73521
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IRF5210STRLPBF
Infineon
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$0.99823
10+
$0.81248
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$0.72041
100+
$0.62834
500+
$0.49750
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| 属性 | 值 |
|---|---|
| 制造商产品编号 | IRF5210STRLPBF |
| 制造商 | Infineon |
| 产品分类 | MOSFETs |
| RoHS | Yes |
| ECCN | EAR99 |
| Operating Temperature | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)@Id) | 2V@250uA |
| Type | 1 Piece P-Channel |
| Power Dissipation (Pd) | 3.1W |
| Drain Source Voltage (Vdss) | 100V |
| Continuous Drain Current (Id) | 38A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 60mΩ@10V,38A |
| Reverse Transfer Capacitance (Crss@Vds) | 430pF |
| Input Capacitance (Ciss@Vds) | 2780pF@0V |
| Total Gate Charge (Qg@Vgs) | 230nC@ |
| Drain to Source Voltage | 100V |
| Number | 1 P-Channel |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Type | P-Channel |
| Gate Threshold Voltage (Vgs(th)) | 4V@250uA |
| RDS(on) | 60mΩ@10V |
| Pd - Power Dissipation | 170W |
| Current - Continuous Drain(Id) | 38A |
| Output Capacitance(Coss) | 800pF |
| Gate Charge(Qg) | 230nC@10V |
| Input Capacitance(Ciss) | 2.78nF |
| Package | D2PAK |
| Packaging | Tape & Reel (TR) |
| Standard Package | 800 |
| Weight | 2.343 |
