Wuxi NCE Power Semiconductor NCE65TF099
650V 38A 89m@10V,19A 322W 3.5V@250uA 1 N-Channel TO-220 MOSFETs ROHS
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库存 413件
一天内发货数量
单价
1+
$2.42658
10+
$2.02189
50+
$1.76974
100+
$1.50980
最低订购数量 1
合计:
$2.43
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NCE65TF099
NCE
1+
$2.19734
10+
$1.83168
50+
$1.60214
100+
$1.36800
500+
$1.26086
库存 0件
库存 0件
一天内发货
最小起订量 1
合计:$0.00
合计:$0.00
| 属性 | 值 |
|---|---|
| 制造商产品编号 | NCE65TF099 |
| 制造商 | NCE |
| 产品分类 | MOSFETs |
| RoHS | Yes |
| ECCN | - |
| Drain Source Voltage (Vdss) | 650V |
| Type | 1 N-channel |
| Gate Threshold Voltage (Vgs(th)@Id) | 3.5V@250uA |
| Total Gate Charge (Qg@Vgs) | 45nC@10V |
| Continuous Drain Current (Id) | 38A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 89mΩ@10V,19A |
| Power Dissipation (Pd) | 322W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.5pF@50V |
| Input Capacitance (Ciss@Vds) | 2.8nF@50V |
| Drain to Source Voltage | 650V |
| Operating Junction Temperature Range | -55℃~+150℃@(Tj) |
| Number | 1 N-Channel |
| Gate Charge(Qg) | 45nC@10V |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Current - Continuous Drain(Id) | 38A |
| RDS(on) | 89mΩ@10V,19A |
| Pd - Power Dissipation | 322W |
| Input Capacitance(Ciss) | 2.8nF@50V |
| Package | TO-220 |
| Packaging | Tube-packed |
| Standard Package | 50 |
| Weight | 2.74 |
