onsemi FDC655BN
30V 6.3A 1.6W 25m@10V,6.3A 1.9V@250uA 1 N-Channel SSOT-6 MOSFETs ROHS
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FDC655BN
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| 属性 | 值 |
|---|---|
| 制造商产品编号 | FDC655BN |
| 制造商 | onsemi |
| 产品分类 | MOSFETs |
| RoHS | Yes |
| ECCN | EAR99 |
| Operating Temperature | -55℃~+150℃ |
| Power Dissipation (Pd) | 1.6W |
| Type | 1 N-channel |
| Drain Source Voltage (Vdss) | 30V |
| Total Gate Charge (Qg@Vgs) | 15nC@10V |
| Input Capacitance (Ciss@Vds) | 620pF@15V |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.9V@250uA |
| Continuous Drain Current (Id) | 6.3A |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF@15V |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 25mΩ@10V,6.3A |
| Package | SSOT-6 |
| Packaging | Tape & Reel (TR) |
| Standard Package | 3000 |
| Weight | 0.042 |
