Vishay Intertech SI4459ADY-T1-GE3
30V 29A 5m@10V,15A 2.5V@250uA 1 Piece P-Channel SOIC-8 MOSFETs ROHS
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SI4459ADY-T1-GE3
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SI4459ADY-T1-GE3
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| 属性 | 值 |
|---|---|
| 制造商产品编号 | SI4459ADY-T1-GE3 |
| 制造商 | VISHAY |
| 产品分类 | MOSFETs |
| RoHS | Yes |
| ECCN | EAR99 |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Drain Source Voltage (Vdss) | 30V |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
| Type | 1 Piece P-Channel |
| Continuous Drain Current (Id) | 29A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 5mΩ@10V,15A |
| Total Gate Charge (Qg@Vgs) | 195nC@10V |
| Input Capacitance (Ciss@Vds) | 6nF@15V |
| Power Dissipation (Pd) | 3.5W;7.8W |
| Drain to Source Voltage | 30V |
| Number | 1 P-Channel |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Type | P-Channel |
| Gate Threshold Voltage (Vgs(th)) | 2.5V@250uA |
| Pd - Power Dissipation | 45W |
| Current - Continuous Drain(Id) | 29A |
| RDS(on) | 7.75mΩ@4.5V,10A |
| Reverse Transfer Capacitance (Crss@Vds) | 790pF |
| Output Capacitance(Coss) | 860pF |
| Input Capacitance(Ciss) | 6nF |
| Gate Charge(Qg) | [email protected] |
| Package | SO-8 |
| Packaging | Tape & Reel (TR) |
| Standard Package | 2500 |
| Weight | 0.245 |
