Vishay Intertech SI7113ADN-T1-GE3
100V 10.8A 0.132@10V,3.8A 27.8W 1.1V@250uA 1 Piece P-Channel PowerPAK1212-8 MOSFETs ROHS
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SI7113ADN-T1-GE3
VISHAY
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$0.39926
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$0.35626
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$0.33638
100+
$0.31488
500+
$0.30259
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SI7113ADN-T1-GE3
VISHAY
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$0.41327
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$0.33132
750+
$0.29447
1,500+
$0.27775
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$0.26444
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SI7113ADN-T1-GE3
VISHAY
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$0.29467
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$0.28869
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SI7113ADN-T1-GE3
VISHAY
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$1.45373
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| 属性 | 值 |
|---|---|
| 制造商产品编号 | SI7113ADN-T1-GE3 |
| 制造商 | VISHAY |
| 产品分类 | MOSFETs |
| RoHS | Yes |
| ECCN | EAR99 |
| Operating Temperature | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.1V@250uA |
| Type | 1 Piece P-Channel |
| Drain Source Voltage (Vdss) | 100V |
| Continuous Drain Current (Id) | 10.8A |
| Power Dissipation (Pd) | 27.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF@50V |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 0.132Ω@10V,3.8A |
| Input Capacitance (Ciss@Vds) | 515pF@50V |
| Total Gate Charge (Qg@Vgs) | [email protected] |
| Drain to Source Voltage | 100V |
| Number | 1 P-Channel |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.1V |
| Current - Continuous Drain(Id) | 10.8A |
| RDS(on) | 132mΩ@10V,3.8A |
| Pd - Power Dissipation | 27.8W |
| Input Capacitance(Ciss) | 515pF@50V |
| Gate Charge(Qg) | [email protected] |
| Package | PowerPAK1212-8 |
| Packaging | Tape & Reel (TR) |
| Standard Package | 3000 |
| Weight | 0.15 |
